Siloxane Composition for the Passivation of p–n Junctions...

Polymer Science Series D 2018 / 4 Vol. 11; Iss. 2

Siloxane Composition for the Passivation of p–n Junctions of High-Voltage Semiconductor Devices

Neelova, O. V.
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Volume:
11
Language:
english
Journal:
Polymer Science, Series D
DOI:
10.1134/S1995421218020120
Date:
April, 2018
File:
PDF, 245 KB
english, 2018
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