Low-Parasitic-Capacitance Self-Aligned 4H-SiC nMOSFETs for...

Materials Science Forum 2018 / 6 Vol. 924

Low-Parasitic-Capacitance Self-Aligned 4H-SiC nMOSFETs for Harsh Environment Electronics

Kurose, Tatsuya, Kuroki, Shinichiro, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Makino, Takahiro, Ohshima, Takeshi, Östling, Mikael, Zetterling, Carl Mikael
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Volume:
924
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.924.971
Date:
June, 2018
File:
PDF, 1.54 MB
english, 2018
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