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A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs...

A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology

Zhao, Dixian, Yi, Yongran
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Volume:
2018
Year:
2018
Language:
english
Journal:
Wireless Communications and Mobile Computing
DOI:
10.1155/2018/8234615
File:
PDF, 1.97 MB
english, 2018
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