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Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction
Suzuki, Hidetoshi, Sasaki, Takuo, Takahasi, Masamitu, Ohshita, Yoshio, Kojima, Nobuaki, Kamiya, Itaru, Fukuyama, Atsuhiko, Ikari, Tetsuo, Yamaguchi, MasafumiVolume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.08MA06
Date:
August, 2017
File:
PDF, 833 KB
english, 2017