![](/img/cover-not-exists.png)
[IEEE 2018 IEEE International Memory Workshop (IMW) - Kyoto, Japan (2018.5.13-2018.5.16)] 2018 IEEE International Memory Workshop (IMW) - Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors with Low-Voltage Operation and High Reliability for Next-Generation FRAM Applications
Kim, Si Joon, Mohan, Jaidah, Young, Chadwin D., Colombo, Luigi, Kim, Jiyoung, Summerfelt, Scott R., San, TamerYear:
2018
Language:
english
DOI:
10.1109/IMW.2018.8388832
File:
PDF, 2.40 MB
english, 2018