Controllable growth of GeSi nanostructures by molecular beam epitaxy
Ma, Yingjie, Zhou, Tong, Zhong, Zhenyang, Jiang, ZuiminVolume:
39
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/39/6/061004
Date:
June, 2018
File:
PDF, 4.94 MB
english, 2018