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[IEEE 2018 7th International Symposium on Next Generation Electronics (ISNE) - Taipei, Taiwan (2018.5.7-2018.5.9)] 2018 7th International Symposium on Next Generation Electronics (ISNE) - Analysis of heterojunction GaAs1−xSbx/In1−yGayAs tunnel FETs considering line tunneling
Wang, Chiu-Ting, Hu, Vita Pi-HoYear:
2018
DOI:
10.1109/ISNE.2018.8394741
File:
PDF, 365 KB
2018