Modeling the Reverse Gate-Leakage Current in GaN-Channel HFETs: Realistic Assessment of Fowler-Nordheim and Leakage at Mesa Sidewalls
Mojaver, Hassan Rahbardar, Valizadeh, PouyaYear:
2018
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2846219
File:
PDF, 2.02 MB
english, 2018