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Investigation of the Robust Edge Termination Applied to 6.5kV SiC MOSFET
Ebihara, Kohei, Kawahara, Koutarou, Hino, Shiro, Sadamatsu, Koji, Nagae, Akemi, Nakao, Yukiyasu, Watanabe, Hiroshi, Yamakawa, SatoshiVolume:
924
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.924.778
Date:
June, 2018
File:
PDF, 754 KB
english, 2018