Ultra-wide band gap AlGaN polarization-doped field effect...

Japanese Journal of Applied Physics 2018 / 07 Vol. 57; Iss. 7

Ultra-wide band gap AlGaN polarization-doped field effect transistor

Armstrong, Andrew M., Klein, Brianna A., Colon, Albert, Allerman, Andrew A., Douglas, Erica A., Baca, Albert G., Fortune, Torben R., Abate, Vincent M., Bajaj, Sanyam, Rajan, Siddharth
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Volume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.074103
Date:
July, 2018
File:
PDF, 885 KB
english, 2018
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