Fully Analytical Carrier-Based Charge and Capacitance Model...

  • Main
  • 2018
  • Fully Analytical Carrier-Based Charge and Capacitance Model...
IEEE Transactions on Electron Devices 2018

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

Lu, Bin, Lu, Hongliang, Zhang, Yuming, Zhang, Yimen, Cui, Xiaoran, Lv, Zhijun, Liu, Chen
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2018
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2849742
File:
PDF, 2.33 MB
english, 2018
Conversion to is in progress
Conversion to is failed