New Approach to Hot Electron Effects in Si-MOSFETs Based on...

VLSI Design 1998 Vol. 6; Iss. 1-4

New Approach to Hot Electron Effects in Si-MOSFETs Based on an Evolutionary Algorithm Using a Monte Carlo Like Mutation Operator

Jakumeit, J., Ravaioli, U., Hess, K.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
6
Year:
1998
Language:
english
Journal:
VLSI Design
DOI:
10.1155/1998/81023
File:
PDF, 1.70 MB
english, 1998
Conversion to is in progress
Conversion to is failed