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Analysis of Trapping Effects on the Forward Current-Voltage Characteristics of Al-Implanted 4H-SiC p-i-n Diodes
Megherbi, M. Larbi, Pezzimenti, Fortunato, Dehimi, Lakhdar, Saadoune, M. Achour, Della Corte, Francesco G.Year:
2018
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2849693
File:
PDF, 1.84 MB
english, 2018