Deep Level Defects in 4H-SiC Epitaxial Layers

Materials Science Forum 2018 / 6 Vol. 924

Deep Level Defects in 4H-SiC Epitaxial Layers

Capan, Ivana, Brodar, Tomislav, Ohshima, Takeshi, Sato, Shinichiro, Makino, Takahiro, Pastuovic, Željko, Siegele, Rainer, Snoj, Luka, Radulović, Vadimir, Coutinho, José, Torres, Vitor J.B., Demmouche,
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Volume:
924
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.924.225
Date:
June, 2018
File:
PDF, 526 KB
english, 2018
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