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Correlation between static random access memory power-up state and transistor variation
Takeuchi, Kiyoshi, Mizutani, Tomoko, Saraya, Takuya, Shinohara, Hirofumi, Kobayashi, Masaharu, Hiramoto, ToshiroVolume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.04CD03
Date:
April, 2017
File:
PDF, 1.32 MB
english, 2017