Role of Trench Bottom Shielding Region on Switching...

Materials Science Forum 2018 / 6 Vol. 924

Role of Trench Bottom Shielding Region on Switching Characteristics of 4H-SiC Double-Trench Mosfets

Kyogoku, Shinya, Tanaka, Katsuhisa, Ariyoshi, Keiko, Iijima, Ryosuke, Kobayashi, Yusuke, Harada, Shinsuke
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Volume:
924
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.924.748
Date:
June, 2018
File:
PDF, 1.86 MB
english, 2018
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