Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon
Yacoub, Hady, Zweipfennig, Thorsten, Lukens, Gerrit, Behmenburg, Hannes, Fahle, Dirk, Eickelkamp, Martin, Heuken, Michael, Kalisch, Holger, Vescan, AndreiYear:
2018
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2850066
File:
PDF, 2.80 MB
english, 2018