About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C
Nipoti, Roberta, Carnera, Alberto, Alfieri, Giovanni, Kranz, LukasVolume:
924
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.924.333
Date:
June, 2018
File:
PDF, 668 KB
english, 2018