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Near-field scanning microscopy and physico-chemical analysis versus time of SiCN:H thin films grown in Ar/NH3/TMS gas mixture using MW-Plasma CVD at 400 °C
Plujat, Béatrice, Glénat, Hervé, Hamon, Jonathan, Gazal, Yoan, Goullet, Antoine, Hernandez, Emmanuel, Quoizola, Sébastien, Thomas, LaurentLanguage:
english
Journal:
Plasma Processes and Polymers
DOI:
10.1002/ppap.201800066
Date:
July, 2018
File:
PDF, 2.86 MB
english, 2018