[IEEE 2018 7th International Symposium on Next Generation Electronics (ISNE) - Taipei, Taiwan (2018.5.7-2018.5.9)] 2018 7th International Symposium on Next Generation Electronics (ISNE) - Improving operation electric field of Cu-based resistive switching memory by Cu chemical displacement technique
Liao, Tun-Po, Tzeng, Bo-Ling, Wu, Chi-Chang, Yang, Wen-LuhYear:
2018
DOI:
10.1109/ISNE.2018.8394754
File:
PDF, 610 KB
2018