Physical and electrical characterizations of AlGaN/GaN MOS...

Japanese Journal of Applied Physics 2018 / 06 Vol. 57; Iss. 6S3

Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

Yamada, Takahiro, Watanabe, Kenta, Nozaki, Mikito, Shih, Hong-An, Nakazawa, Satoshi, Anda, Yoshiharu, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
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Volume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.06KA07
Date:
June, 2018
File:
PDF, 1.83 MB
english, 2018
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