High Performance Self-Gating Graphene/MoS2 Diode Enabled by...

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Nanotechnology 2018 / 07

High Performance Self-Gating Graphene/MoS2 Diode Enabled by Asymmetric Contacts

Khan, Muhammad Atif, Rathi, Servin, Lee, Changhee, Kim, Yunseob, Kim, Hanul, Whang, Dongmok, Yun, Sun Jin, Youn, Doo-Hyeb, Watanabe, Kenji, Taniguchi, Takashi, Kim, Gil-Ho
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Language:
english
Journal:
Nanotechnology
DOI:
10.1088/1361-6528/aad0af
Date:
July, 2018
File:
PDF, 866 KB
english, 2018
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