Influence of Al Doping Concentration and Annealing...

Materials Science Forum 2018 / 6 Vol. 924

Influence of Al Doping Concentration and Annealing Parameters on TiAl Based Ohmic Contacts on 4H-SiC

Kocher, Matthias, Rommel, Mathias, Erlbacher, Tobias, Bauer, Anton J.
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Volume:
924
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.924.393
Date:
June, 2018
File:
PDF, 650 KB
english, 2018
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