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Low-temperature (150 °C) activation of Ar+O 2 +H 2 -sputtered In–Ga–Zn–O for thin-film transistors
Aman, S. G. Mehadi, Magari, Yusaku, Shimpo, Kenta, Hirota, Yuya, Makino, Hisao, Koretomo, Daichi, Furuta, MamoruVolume:
11
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.11.081101
Date:
August, 2018
File:
PDF, 4.18 MB
english, 2018