Fabrication of GaN (1−x) As...

Crystal Research and Technology 2018 / 07

Fabrication of GaN (1−x) As x , Zinc-Blende, or Wurtzite GaN Depending on GaAs Nitridation Temperature in a CVD System

Ramírez-González, Francisco Sebastian, García-Salgado, Godofredo, Morales, Crisóforo, Díaz, Tomás, Rosendo, Enrique, Nieto-Caballero, Fabiola Gabriela, Luna, José Alberto, Coyopol, Antonio, Romano, Ro
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Language:
english
Journal:
Crystal Research and Technology
DOI:
10.1002/crat.201800042
Date:
July, 2018
File:
PDF, 3.14 MB
english, 2018
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