Theory and design of InxGa1-xAs1-yBiy mid-infrared...

Semiconductor Science and Technology 2018 / 07

Theory and design of InxGa1-xAs1-yBiy mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 μm on InP substrates

Broderick, Christopher A, Xiong, Wanshu, Sweeney, Stephen, O'Reilly, Eoin P, Rorison, Judy M
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Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aad2bd
Date:
July, 2018
File:
PDF, 961 KB
english, 2018
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