[IEEE 2018 7th International Symposium on Next Generation...

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[IEEE 2018 7th International Symposium on Next Generation Electronics (ISNE) - Taipei, Taiwan (2018.5.7-2018.5.9)] 2018 7th International Symposium on Next Generation Electronics (ISNE) - Drive current behaviors of multi N-channel FinFETs under different VT implant energies

Wang, Zhiming, Chou, Ching-Chuan, Wang, Wei-Cheng, Shen, Tien-Szu, Chao, Ting-Wei, Xie, Zi-Jun, Liao, Wen-Shiang, Wang, Mu-Chun
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Year:
2018
Language:
english
DOI:
10.1109/ISNE.2018.8393501
File:
PDF, 848 KB
english, 2018
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