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[IEEE 2018 7th International Symposium on Next Generation Electronics (ISNE) - Taipei, Taiwan (2018.5.7-2018.5.9)] 2018 7th International Symposium on Next Generation Electronics (ISNE) - Strain relaxation properties of InAsyP1−y metamorphic buffer layers for SWIR InGaAs photodetector
Hsieh, Hao-Kai, Chou, Chieh, Lin, Hao-Hsiung, Luo, Jiunn-Jye, Li, Shao-YiYear:
2018
Language:
english
DOI:
10.1109/ISNE.2018.8394645
File:
PDF, 754 KB
english, 2018