Improvement by Channel Recess of Contact Resistance and...

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IEEE Electron Device Letters 2018

Improvement by Channel Recess of Contact Resistance and Gate Control in Large-scale Spin-coated MoS2 MOSFETs

Xiong, Kuanchen, Li, Lei, Marstell, Roderick J., Madjar, Asher, Strandwitz, Nicholas C., Hwang, James C. M., Lin, Zhaoyang, Huang, Yu, Duan, Xiangfeng, Goritz, Alexander, Wietstruck, Matthias, Kaynak,
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Year:
2018
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2018.2854789
File:
PDF, 1.16 MB
english, 2018
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