Schottky Emission Distance and Barrier Height Properties of...

Materials 2017 / 12 Vol. 11; Iss. 1

Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments

Chen, Kai-Huang, Tsai, Tsung-Ming, Cheng, Chien-Min, Huang, Shou-Jen, Chang, Kuan-Chang, Liang, Shu-Ping, Young, Tai-Fa
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Volume:
11
Language:
english
Journal:
Materials
DOI:
10.3390/ma11010043
Date:
December, 2017
File:
PDF, 1.69 MB
english, 2017
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