Initial Processes of Atomic Layer Deposition of Al2O3 on...

Materials 2012 / 03 Vol. 5; Iss. 12

Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

Jevasuwan, Wipakorn, Urabe, Yuji, Maeda, Tatsuro, Miyata, Noriyuki, Yasuda, Tetsuji, Yamada, Hisashi, Hata, Masahiko, Taoka, Noriyuki, Takenaka, Mitsuru, Takagi, Shinichi
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Volume:
5
Language:
english
Journal:
Materials
DOI:
10.3390/ma5030404
Date:
March, 2012
File:
PDF, 1020 KB
english, 2012
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