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Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate
Anzalone, Ruggero, Piluso, Nicolò, Litrico, Grazia, Lorenti, Simona, Arena, Giuseppe, Coffa, Salvatore, La Via, FrancescoVolume:
924
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.924.535
Date:
June, 2018
File:
PDF, 1.35 MB
english, 2018