Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition
Yoon, So-Jung, Seong, Nak-Jin, Choi, Kyujeong, Shin, Woong-Chul, Yoon, Sung-MinVolume:
8
Year:
2018
Language:
english
Journal:
RSC Advances
DOI:
10.1039/C8RA03639J
File:
PDF, 1.02 MB
english, 2018