Buried channel normally-off AlGaN/GaN MOS-HEMT with a p-n...

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Semiconductor Science and Technology 2018 / 07

Buried channel normally-off AlGaN/GaN MOS-HEMT with a p-n junction in GaN buffer

Soman, Rohith, Kulamarva, Manish Sharma, Ramesh, Nayana, Nath, Digbijoy, rangarajan, Muralidharan, Bhat, Kunchinadka Narayana, Raghavan, Srinivasan, Bhat, Navakanta
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Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aad2bb
Date:
July, 2018
File:
PDF, 902 KB
english, 2018
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