Low Leakage Current Resistive Memory Based on Bi1.10...

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Semiconductor Science and Technology 2018 / 07

Low Leakage Current Resistive Memory Based on Bi1.10 (Fe0.95Mn0.05) O3 Films

Li, Zhen, Yang, Zhengchun, Wu, Jiagang, Zhou, Baozeng, Bao, Qiwen, Zhang, kailiang, Zhao, Jinshi, Wei, Jun
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Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aad340
Date:
July, 2018
File:
PDF, 1.41 MB
english, 2018
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