Hole mobility enhancements in strained In...

Japanese Journal of Applied Physics 2015 / 04 Vol. 54; Iss. 4S

Hole mobility enhancements in strained In x Ga 1− x Sb heterostructure p-channel MOSFETs

Chang, Pengying, Liu, Xiaoyan, Zeng, Lang, Du, Gang
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Volume:
54
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.54.04DF08
Date:
April, 2015
File:
PDF, 1.65 MB
english, 2015
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