Fabrication of GaAs solar cells grown with InGaP layers by...

Japanese Journal of Applied Physics 2018 / 08 Vol. 57; Iss. 8S3

Fabrication of GaAs solar cells grown with InGaP layers by hydride vapor-phase epitaxy

Oshima, Ryuji, Makita, Kikuo, Ubukata, Akinori, Sugaya, Takeyoshi
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Volume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.08RD06
Date:
August, 2018
File:
PDF, 897 KB
english, 2018
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