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High electron mobility transistors with Fe-doped semi-insulating GaN buffers on (110) Si substrates grown by ammonia molecular beam epitaxy
Noh, Young-Kyun, Lee, Sang-Tae, Kim, Moon-Deock, Oh, Jae-EungLanguage:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2018.07.016
Date:
July, 2018
File:
PDF, 927 KB
english, 2018