Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2018 / 07 Vol. 36; Iss. 4
Germanium out diffusion in SiGe-based HfO 2 gate stacks
Martinez, Eugenie, Nolot, Emmanuel, Barnes, Jean-Paul, Mazel, Yann, Bernier, Nicolas, Muthinti, Raja, Jagannathan, Hemanth, Lee, Choonghyun, Gambacorti, NarcisoVolume:
36
Language:
english
Journal:
Journal of Vacuum Science & Technology B
DOI:
10.1116/1.5027072
Date:
July, 2018
File:
PDF, 1.55 MB
english, 2018