![](/img/cover-not-exists.png)
[IEEE 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2018.4.16-2018.4.19)] 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Steep slope 2D negative capacitance CMOS devices: MoS2 and WSe2
Si, Mengwei, Ye, Peide D.Year:
2018
Language:
english
DOI:
10.1109/VLSI-TSA.2018.8403843
File:
PDF, 661 KB
english, 2018