Thermally activated defects in float zone silicon: Effect...

Journal of Applied Physics 2018 / 07 Vol. 124; Iss. 3

Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states

Mullins, Jack, Markevich, Vladimir P., Vaqueiro-Contreras, Michelle, Grant, Nicholas E., Jensen, Leif, Jabłoński, Jarosław, Murphy, John D., Halsall, Matthew P., Peaker, Anthony R.
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Volume:
124
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5036718
Date:
July, 2018
File:
PDF, 1.37 MB
english, 2018
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