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[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Extending the RET-IGBT (recessed emitter trench IGBT) concept to high voltages: Experimental demonstration of 3.3kV RET IGBT
Ngwendson, L., Deviny, I., Zhu, C., Saddiqui, I., Kong, C., Islam, A., Hutchings, J., Thompson, J., Briggs, M., Basset, O., Luo, H., Wang, Y., Yao, Y.Year:
2018
Language:
english
DOI:
10.1109/ISPSD.2018.8393622
File:
PDF, 1.21 MB
english, 2018