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Silicon epitaxial growth accelerated by parallel Langmuir processes using SiH 2 Cl 2 and SiH 3 CH 3 gases
Yamada, Ayami, Muroi, Mitsuko, Watanabe, Toru, Saito, Ayumi, Sakurai, Ayumi, Habuka, HitoshiVolume:
33
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aad294
Date:
September, 2018
File:
PDF, 967 KB
english, 2018