Characteristics of GaN/Si(111) Epitaxy Grown using...

MRS Proceedings 2002 Vol. 722

Characteristics of GaN/Si(111) Epitaxy Grown using Al0.1Ga0.9N/AlN Composite Nucleation Layers having Different Thicknesses of AlN

Jang, Seong-Hwan, Lee, Seung-Jae, Seo, In-Seok, Ahn, Haeng-Keun, Lee, Oh-Yeon, Leem, Jae-Young, Lee, Cheul-Ro
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Volume:
722
Year:
2002
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-722-K7.3
File:
PDF, 861 KB
english, 2002
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