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Fast estimation of channel temperature in GaN high electron mobility transistor under rf operating conditions
Chervonni, Boris, Aktushev, Oleg, Ojalvo, Efi, Knafo, Yaron, Turkulets, Yury, Shalish, IlanLanguage:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aad539
Date:
July, 2018
File:
PDF, 609 KB
english, 2018