Technology and Reliability of Normally-Off GaN HEMTs with...

Energies 2017 / 01 Vol. 10; Iss. 2

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Meneghini, Matteo, Hilt, Oliver, Wuerfl, Joachim, Meneghesso, Gaudenzio
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Volume:
10
Language:
english
Journal:
Energies
DOI:
10.3390/en10020153
Date:
January, 2017
File:
PDF, 4.22 MB
english, 2017
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