Random Dopant-Induced Variability in Si-InAs nanowire...

  • Main
  • 2018
  • Random Dopant-Induced Variability in Si-InAs nanowire...
IEEE Electron Device Letters 2018

Random Dopant-Induced Variability in Si-InAs nanowire Tunnel FETs: A Quantum Transport Simulation Study

Carrillo-Nunez, Hamilton, Lee, Jaehyun, Berrada, Salim, Medina-Bailon, Cristina, Adamu-Lema, Fikru, Luisier, Mathieu, Asenov, Asen, Georgiev, Vihar P.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2018
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2018.2859586
File:
PDF, 471 KB
english, 2018
Conversion to is in progress
Conversion to is failed