[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Enhanced breakdown voltage and low inductance of All-SiC module
Hori, Motohito, Hinata, Yuichiro, Taniguchi, Katsumi, Ikeda, Yoshinari, Yamazaki, TomoyukiYear:
2018
Language:
english
DOI:
10.1109/ISPSD.2018.8393702
File:
PDF, 1.01 MB
english, 2018