[IEEE 2018 IEEE 30th International Symposium on Power...

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[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - 40 V to 100 V NLDMOS built on thin BOX SOI with high energy capability, state of the art Rdson/BVdss and robust performance

Hao, Yang, Ching, Sim Poh, Liew, Madelyn, Hoelke, Alexander, Eckoldt, Uwe, Pfost, Martin
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Year:
2018
Language:
english
DOI:
10.1109/ISPSD.2018.8393708
File:
PDF, 1.93 MB
english, 2018
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