[IEEE 2018 IEEE 30th International Symposium on Power...

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[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Novel integration techniques of "recessed" high voltage field-drift MOSFET with HK/MG RMG technology

Hsiung, C.P., Chiang, P.H., Pu, S C., Wang, C.L., Lu, C.W., Liu, K.L., Chang, K.K., Yang, C.C., Lee, N.C., Hsiao, S.Y., Lee, W.F., Wang, C.C.
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Year:
2018
Language:
english
DOI:
10.1109/ISPSD.2018.8393709
File:
PDF, 1.42 MB
english, 2018
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